| 摘要 |
<P>PROBLEM TO BE SOLVED: To employ a transistor using an oxide semiconductor to a logic circuit using an enhancement transistor. <P>SOLUTION: The logic circuit includes: a depletion transistor 101 and an enhancement transistor 102. The transistors 101 and 102 include gate electrodes, gate insulating layers, first oxide semiconductor layers, second oxide semiconductor layers, source electrodes, and drain electrodes, respectively. The transistor 102 includes a reduction prevention layer formed over a region in the first oxide semiconductor layer between the source electrode and the drain electrode. <P>COPYRIGHT: (C)2010,JPO&INPIT |
