| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device which allows the proportion of a light reflected into the interior of the device to be reduced by a pattern for optical extraction formed in a light emission surface to obtain an excellent optical extraction efficiency, and a method of manufacturing the same. <P>SOLUTION: This semiconductor light-emitting device 100 includes a first conductivity type semiconductor layer 101, an active layer 102 formed on the upper surface of the first conductivity type semiconductor layer 101, and a second conductivity type semiconductor layer 103 formed on the upper surface of the active layer 102. In the device, the pattern for optical extraction which has upper portions 103a of a hemispherical shape and pillar shape sections 103b is formed in the upper surface of the second conductivity type semiconductor layer 103. <P>COPYRIGHT: (C)2010,JPO&INPIT |
