MEASUREMENT OF DIFFRACTING STRUCTURE, BROADBAND, POLARIZED, ELLIPSOMETRY, AND UNDERLYING STRUCTURE

摘要

PROBLEM TO BE SOLVED: To determine a grating shape parameter of a diffracting structure on a wafer. SOLUTION: Before the diffraction from the diffracting structure 12c on a semiconductor wafer 12a is measured, the film thickness and index of the refraction of a film 12b underneath the structure are first measured using spectroscopic reflectometry 60 or spectroscopic ellipsometry 34 when required. A rigorous model is then used to calculate the intensity or the ellipsometric characteristic parameter of the diffracting structure 12c. The diffracting structure 12c is then measured using a spectroscopic scatterometer using polarized radiation and broadband radiation to obtain the intensity or an ellipsometric characteristic parameter of the diffracting structure 12c. Such a characteristic parameter is then matched with the characteristic parameter in a database to determine the grating shape parameter of the structure. COPYRIGHT: (C)2010,JPO&INPIT