| 摘要 |
PROBLEM TO BE SOLVED: To provide a pixel circuit, a solid-state image sensor, and a camera system capable of easily transmitting charges within a pixel, improving an accumulated charge amount and sensitivity, and increasing imaging performance. SOLUTION: A transfer transistor 112 has first, second and third field-effect transistors 1121 to 1123 which are integrally and serially connected from a photoelectric conversion element 111 toward an amplifier circuit side, wherein gate electrodes of the first and second field-effect transistors are simultaneously and totally driven and a threshold voltage of the first field-effect transistor is set to be higher than a threshold voltage of the second field-effect transistor. An electron produced by the photoelectric conversion element and transferred via the first field-effect transistor along with a gradual drive of the gate electrodes is accumulated at a channel area of the second field-effect transistor and then the electron accumulated in the channel area is transferred to an input of an amplifier circuit via the third field-effect transistor. COPYRIGHT: (C)2010,JPO&INPIT |
