发明名称 Constant Reference Cell Current Generator For Non-Volatile Memories
摘要 A reference current generation circuit generates a first branch current that varies by a first percentage in response to variations in a first supply voltage and variations in transistor threshold voltage. The first branch current is mirrored to create a corresponding second branch current. A first portion (sub-current) of the second branch current is supplied through a first transistor, which exhibits the transistor threshold voltage wherein the first sub-current varies by a second percentage in response to the variations in the first supply voltage and variations in transistor threshold voltage, wherein the second percentage is greater than the first percentage. A second portion (sub-current) of the second branch current is supplied through a second transistor. The second portion of the second branch current is mirrored to create a reference current (IREF).
申请公布号 US2010148855(A1) 申请公布日期 2010.06.17
申请号 US20080334338 申请日期 2008.12.12
申请人 MOSYS,INC. 发明人 YU DA-GUANG;RAO VITHAL
分类号 G05F1/10 主分类号 G05F1/10
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