发明名称 |
SEMICONDUCTOR MEMORY DEVICE AND METHODS OF PERFORMING A STRESS TEST ON THE SEMICONDUCTOR MEMORY DEVICE |
摘要 |
<p>A semiconductor memory device and method of performing a stress test on a semiconductor memory device are provided. In an example, the semiconductor memory device includes a multiplexer arrangement configured to switch a timing signal that controls an internal timing of the semiconductor memory device from an internal signal to an external signal during a stress mode, and further includes one or more word lines of the semiconductor memory device receiving a stress voltage during the stress mode, a duration of the stress mode based upon the external signal. In another example, the semiconductor memory device includes one or more word lines configured to receive a stress voltage during a stress mode, and a precharge circuit configured to provide a precharge voltage to a bit line of the semiconductor memory device during the stress mode.</p> |
申请公布号 |
WO2010068591(A1) |
申请公布日期 |
2010.06.17 |
申请号 |
WO2009US66991 |
申请日期 |
2009.12.07 |
申请人 |
QUALCOMM INCORPORATED;CHEN, NAN;JUNG, CHANGHO;CHEN, ZHIQIN |
发明人 |
CHEN, NAN;JUNG, CHANGHO;CHEN, ZHIQIN |
分类号 |
G11C29/06;G11C29/50 |
主分类号 |
G11C29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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