| 摘要 |
PROBLEM TO BE SOLVED: To provide stable capacitive values in semiconductor devices including capacitors in a MIM structure. SOLUTION: The semiconductor device 100 includes: an insulation film 154 formed on a substrate (not shown); and a MIM capacitor 200 including first and second electrodes formed in the same layer and oppositely disposed via the insulation film 154. The first and second electrodes are composed of first and second high-aspect vias 110, 120, respectively, extended over a layer where a via 130 formed in the other region 300 and wiring 132 formed on the via while being connected to the via in a lamination direction of the substrate. COPYRIGHT: (C)2010,JPO&INPIT |
