| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an inductively-coupled plasma processing apparatus of which power efficiency is superior. <P>SOLUTION: This inductively-coupled plasma processing apparatus is equipped with a processing chamber to house a processed substrate and apply a plasma-processing, a placing stand to place the processed substrate in the processing chamber, a processing gas supply system to supply a processing gas into the processing chamber, an exhaust system to exhaust the interior of the processing chamber, and an antenna circuit 13b and a parallel circuit (antenna circuit 13a) connected to the antenna circuit 13b in parallel which are arranged at the exterior of the processing chamber via a dielectric member and wherein an induction electric field is formed in the processing chamber by supplying a high frequency electric power. By means that impedances of the antenna circuit 13a and the antenna circuit 13b are made to have a reverse phase, the inductively-coupled plasma is formed in the processing chamber. <P>COPYRIGHT: (C)2010,JPO&INPIT |
