| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for achieving a pattern inspection device for a semiconductor device to perform precise high-speed evaluation of shape variations among multiple contact holes (apertures) formed in an integrated circuit of the semiconductor device. Ž<P>SOLUTION: A pattern image detected by an SEM image detection part 1.36 is a pattern image of a substrate wherein a great number of contact holes are formed. The pattern image is supplied to a contrast calculation part 1.23 from the SEM image detection part 1.36 and density contrast of the whole pattern image is calculated. The calculated contrast is supplied to a variations calculation and determination part 1.24, by which shape variations of a large number of contact holes is calculated and digitized. The variations calculation and determination part 1.24 determines whether the digitized variations is within a predetermined range or not by comparison with a reference value stored in a database 1.17. If the variations is outside the predetermined range, a stop signal is output and the state is displayed on a display device 1.27. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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