METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a silicon carbide semiconductor device capable of performing the planarizing of the main surface of a silicon carbide layer with accuracy without requiring any polishing process like MCP or CMP and re-epitaxial process. SOLUTION: A planarized film 6 having a smaller surface roughness than that of the main surface 2a of the silicon carbide layer 2 is formed to cover the main surface 2a of the silicon carbide layer 2, and an active annealing is performed. The silicon carbide layer 2 and the planarized film 6 are etched simultaneously under an etching condition that etching rates of the silicon carbide layer 2 and the planarized film 6 are substantially the same. Finally the main surface 2a of the silicon carbide layer 2 is planarized with accuracy by completely removing the planarized film 6. COPYRIGHT: (C)2010,JPO&INPIT