| 摘要 |
PROBLEM TO BE SOLVED: To suppress damage to a gate insulating film during a step of removing a gate electrode in a semiconductor device having a dual metal gate structure. SOLUTION: In a semiconductor device having a first transistor and a second transistor, the first transistor includes: a first gate electrode including a first material having a first work function; and a first gate insulating film. The second transistor includes: a second gate electrode including a second material having a second work function; and a second gate insulating film. The first gate insulating film includes high dielectric constant films and a first insulating film formed on a first high dielectric constant film. In the second gate insulating film, after removing the first gate electrode, the first insulating film formed on the upper part of the high dielectric constant films is removed. COPYRIGHT: (C)2010,JPO&INPIT
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