发明名称 GRADED HIGH GERMANIUM COMPOUND FILMS FOR STRAINED SEMICONDUCTOR DEVICES
摘要 <p>Embodiments of an apparatus and methods for providing a graded high germanium compound region are generally described herein. Other embodiments may be described and claimed.</p>
申请公布号 WO2010068530(A2) 申请公布日期 2010.06.17
申请号 WO2009US66334 申请日期 2009.12.02
申请人 INTEL CORPORATION;SIMONELLI, DANIELLE;MURTHY, ANAND 发明人 SIMONELLI, DANIELLE;MURTHY, ANAND
分类号 H01L21/20;H01L21/336 主分类号 H01L21/20
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