| 摘要 |
<p>Disclosed is an electrically erasable and writable semiconductor memory, the data writing speed of which is increased. In the semiconductor memory device, when data is written, a positive voltage lower than a voltage at a control gate (30) is applied to a potential control gate (28) formed inside a tunnel oxide film (360) between the p-channel (22) and the floating gate (32) of a transistor. This allows the potential barrier between the p-channel (22) and the floating gate (32) of the transistor to be lowered, so that time required for storing electrons on the floating gate (32) is reduced. After the data is stored, a voltage of 0V or a negative voltage is applied to the potential control gate. This allows the electron potential barrier from the floating gate to the channel of the transistor to be increased, so that the data is prevented from being lost.</p> |
