| 摘要 |
<p>PURPOSE: A method of manufacturing an organic thin film transistor is provided to form a fine pattern by using a dry film and a developer without damaging to an organic semiconductor. CONSTITUTION: A source electrode and a drain electrode are formed on a first insulating layer. An organic film is formed on the substrate(110) in which the source / drain electrode are formed. A dry film(150) consisting of the polyvinyl alcohol(Polyvinyl Alcohol: PVA) is laminated on the organic film. A PVA dry film is patterned selectively and a dry film pattern is formed. The organic film is eliminated selectively by using the dry film pattern as a mask, and an organic active layer is formed. A part of a second insulating layer is removed and a contact hole exposing a part of the drain electrode. A pixel electrode which electrically connects through the contact hole with the drain electrode is formed.</p> |
