| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an upper heater for manufacturing a single crystal, which is capable of efficiently controlling crystal defects of a single crystal; and to provide an apparatus and method for manufacturing a high-quality single crystal by using the upper heater for manufacturing a single crystal, efficiently controlling crystal defects, and improving the controllability of the oxygen concentration. <P>SOLUTION: The upper heater is provided at least with electrodes for supplying a current and a heat generating part by resistance heating, and is arranged above a graphite heater arranged so as to surround a crucible accommodating silicon melt used when a single crystal is manufactured by the Czochralsky method. The heat generating part is of a ring shape and arranged so as to surround the crucible; and from the inner side and outer side of the heat generating part, slits are horizontally formed, respectively. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
