| 摘要 |
PROBLEM TO BE SOLVED: To improve an element characteristics and improve reliability of an element even when a semiconductor layer is formed on a gate electrode layer, a source electrode layer and a drain electrode layer. SOLUTION: In a structure including a gate electrode layer, a gate insulating layer provided over the gate electrode layer, a source electrode layer and a drain electrode layer provided to overlap a portion of the gate electrode layer through the gate insulating layer, and a semiconductor layer provided over the gate insulating layer, the source electrode layer and the drain electrode layer, the thickness of the gate insulating layer located in a region between the source electrode layer and the drain electrode layer is set smaller than the thickness of the gate insulating layer provided between the gate electrode layer and the source electrode layer and the thickness of the gate insulating layer provided between the gate electrode layer and the drain electrode layer. COPYRIGHT: (C)2010,JPO&INPIT |
