| 发明名称 |
STABLE POWER DEVICE ON LOW-ANGLE OFF-CUT SILICON CRYSTAL |
| 摘要 |
PROBLEM TO BE SOLVED: To provide a process which can reduce crystal defects present in silicon carbide, and provide a structure and device obtained from the process resultantly. SOLUTION: A silicon carbide based power device has a silicon carbide drift layer having a flat surface which forms an off-axis angle smaller than 8°in <0001> direction. COPYRIGHT: (C)2010,JPO&INPIT |
| 申请公布号 |
JP2010135789(A) |
申请公布日期 |
2010.06.17 |
| 申请号 |
JP20090272182 |
申请日期 |
2009.11.30 |
| 申请人 |
CREE INC |
发明人 |
ZHANG QINGCHUN;AGARWAL ANANT;CAPELL DOYLE CRAIG;BURK ALBERT;SUMAKERIS JOSEPH;O'LOUGHLIN MICHAEL |
| 分类号 |
H01L29/161;H01L21/205;H01L21/331;H01L21/336;H01L29/12;H01L29/47;H01L29/732;H01L29/739;H01L29/74;H01L29/744;H01L29/749;H01L29/78;H01L29/861;H01L29/872 |
主分类号 |
H01L29/161 |
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