| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film semiconductor element and a method of manufacturing the same, which can prevent occurrence of unevenness on a surface when a region which is made amorphous by ion implantation is activated by light irradiation. SOLUTION: The thin film semiconductor device includes an n-channel island semiconductor layer 4a and a p-channel island semiconductor layer 4b respectively formed on a substrate 1, a gate insulating film 5 formed on the island semiconductor layers 4a, 4b, and gate electrodes 6a, 6b respectively formed on the gate insulating film 5. The ion implantation is carried out so that depths t1, t3 and depths t1, t2 are approximately equal, wherein the depths t1, t3 are depths of a region which is made amorphous by ion implantation of n-type impurities to the n-channel island semiconductor layer 4a and the depths t1, t2 is depths of the region which is made amorphous by the ion implantation of p-type impurities to the p-channel island semiconductor layer 4b. COPYRIGHT: (C)2010,JPO&INPIT
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