| 摘要 |
PROBLEM TO BE SOLVED: To provide a film formation method and a film formation apparatus where a film deposition rate is high, and a film of high quality can be deposited at a desired thickness. SOLUTION: The film formation method includes steps of: producing first aerosol by intermittently introducing carrier gas 5 into a first chamber 8 holding raw material powder 7 and mixing the raw material powder 7 with the carrier gas 5; producing second aerosol by introducing the first aerosol into a second chamber 9; and spraying the second aerosol into a third chamber 13 to form a film of the raw material powder 7. COPYRIGHT: (C)2010,JPO&INPIT
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