发明名称 Mems Integrated Circuit With Polymerized Siloxane Layer
摘要 A MEMS integrated circuit comprises: a silicon substrate having a passivated CMOS layer, a MEMS layer disposed on the passivated CMOS layer, and a polymer layer disposed on the MEMS layer. The CMOS layer comprises drive circuitry for actuating actuator devices in the MEMS layer and the polymer layer comprises a polymerized siloxane.
申请公布号 US2010149266(A1) 申请公布日期 2010.06.17
申请号 US20100704496 申请日期 2010.02.11
申请人 SILVERBROOK RESEARCH PTY LTD 发明人 MCAVOY GREGORY JOHN;SILVERBROOK KIA;KERR EMMA ROSE;BAGNAT MISTY;LAWLOR VINCENT PATRICK
分类号 B41J2/14 主分类号 B41J2/14
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