GATE STRUCTURE OF SEMICONDUCTOR DEVICE AND METHODS OF FORMING WORD LINE STRUCTURE AND MEMORY

摘要

A gate structure for a semiconductor device is provided. The gate structure includes a conductive structure. The conductive structure insulatively disposed over a substrate includes a middle portion and two spacer portions. The middle portion has a first surface and two second surfaces. The first surface is between the two second surfaces. The two spacer portions are respectively connected to the two second surfaces of the middle portion. A width of each of the two spacer portions gradually increases from top to bottom.