| 摘要 |
<p>PURPOSE: A thin film transistor, a manufacturing method of the thin film transistor, and a display device using the same are provided to increase reliability of a photo transistor and production yield. CONSTITUTION: The first transistor area(T1) and the second transistor area(T2) are defined on a substrate(110). The first transistor and the second transistor are respectively located on the first transistor area and the second transistor area. In the first semiconductor layer(113), source/channel/drain areas(113a,113c,113b) are defined. The first insulating layer(114) is located on the semiconductor layer. The first transparent electrode(115a) faces the channel area of the semiconductor layer. The second insulating layer(117) is located on the first transparent electrode.</p> |
