| 摘要 |
PURPOSE: A semiconductor light emitting device and a manufacturing method thereof are provided to enhance light emitting efficiency by preventing the total reflection of light which is emitted to a side. CONSTITUTION: An N-type semiconductor layer(20), an active layer(40), and a P-type semiconductor layer(50) are successively laminated, thereby forming a light emitting structure. A first region and a second region with different surface roughness are repeatedly formed on the side of the light emitting structure. A substrate(10') is laminated on the lower surface of the N-type semiconductor layer. The first region and the second region are repeatedly formed on the side of the same substrate. The light emitting structure is mesa-etched from the P-type semiconductor layer to the part of the N-type semiconductor layer.
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