| 摘要 |
<P>PROBLEM TO BE SOLVED: To achieve a semiconductor light emitting device consisting of a plurality of nanocolumns, which is high efficient by utilizing the advantage of the nanocolumns of no through transition. <P>SOLUTION: An n-type GaN layer 21, a light-emitting layer 22 and a p-type GaN layer 23 are sequentially laminated on an SiC substrate 20, and in this case, a V/III ratio of an organic metal gas is changed to form nanocolumns 24 each having a spherical tip (Fig. 2(a)). Then, an SOG 25 is rotatably applied (Fig. 2(b)), the SOG is solidified by baking, only the p-type GaN layer 23 is exposed by etching (Fig. 2(c)), a p-type electrode 27 is formed thereon, and an n-type electrode 28 is continuously formed on the backside of the SiC substrate 20 by evaporation (Fig.2(d)). Accordingly, even when the p-type electrode 27 is continuously formed by usual evaporation, the n-type GaN layer 21 and the p-type GaN layer 23 can be prevented from short circuit over the light-emitting layer 22. Further, the light-emitting layer 22b is encapsulated in the each sphere, thereby improving the efficiency of light extraction. <P>COPYRIGHT: (C)2010,JPO&INPIT |
