GaN-BASED LED DEVICE AND MANUFACTURING METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To provide a GaN-based LED device employing a TCO film for a p-type electrode that achieves at least one of higher power and improved reliability.

SOLUTION: The GaN-based LED device includes: an active layer comprised of a GaN-based semiconductor and a p-type GaN-based semiconductor layer which are sequentially laminated on an n-type GaN-based semiconductor layer; a p-type electrode including the TCO film formed on the main surface opposite to the active layer side main surface of the p-type GaN-base semiconductor layer and a p-side bonding pad connected to the TCO film; a resistance control film that is formed on part of the main surface opposite to the p-type GaN-based semiconductor layer side of the TCO film; an resistance increase region which is formed on an interface between the p-type GaN-based semiconductor layer and the TCO film and reduces a current flowing in the active layer in a lower region of the resistance control film; and an n-side bonding pad connected to the n-type layer.

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