| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light-emitting element increased in luminous efficiency, and to provide a method of manufacturing the same. <P>SOLUTION: The element includes a second electrode layer 50, a second conductivity type semiconductor layer 21 formed on the second electrode layer, an active layer 22 formed on the second conductivity type semiconductor layer, a first conductivity type semiconductor layer 23 which is formed on the active layer and in which a first photonic crystal 70 including a mask layer 71 and an air gap 72 is formed, and a first electrode layer 60 formed on the first conductivity type semiconductor layer. The first photonic crystal is formed in a cycle of λ/n or more and 10λ/n or less, wherein n denotes an index of refraction of the first conductivity type semiconductor layer and λ denotes a wavelength of light emitted from the active layer. The air gap is formed by being surrounded by the mask layer and the first conductivity type semiconductor layer. An upper surface of the mask layer is disposed on the same plane as an upper surface of the first conductivity type semiconductor layer. <P>COPYRIGHT: (C)2010,JPO&INPIT |
