| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To improve reliability of data in a nonvolatile memory, a memory control device, a memory control system, and a control method of the nonvolatile memory. <P>SOLUTION: The nonvolatile memory 1 includes a memory cell array 2, a first sense amplifier 3, a second sense amplifier 4, and a write-in part 5. The memory cell array 2 includes a plurality of memory cells including a floating gate. The first sense amplifier 3 determines difference between a voltage value of the floating gate and a first threshold identifying a write-in state and an erasure state of the memory cell. The second sense amplifier 4 determines difference between the voltage value of the floating gate and a second threshold larger than the first threshold. The write-in part 5 writes again data of the memory cell provided with the floating gate in which the second sense amplifier 4 determines that the second threshold is larger than the voltage of the floating gate. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
