| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory unit and a method for writing into the same, capable of preventing incorrect writing caused by GIDL (Gate-Induced-Drain Leakage). <P>SOLUTION: The nonvolatile semiconductor memory device is provided with: a nonvolatile memory cell array 10 for recording a multi-level value into each memory cell transistor, which is connected in series between selection transistors Qs1 and Qs2 located at both ends for bit line selection, by setting a plurality of different thresholds; and a control circuit 11 for controlling data writing from the memory cell array 10. The control circuit 11 records a binary value into at least a plurality of first memory cell transistors Q0, Q1, Q32 and Q33 which are respectively adjacent to the selection transistors Qs1, Qs2 located at the both ends, and makes control to record the multi-level value of a ternary value or more to a plurality of second transistors Q2 to Q31 other than the first memory cell transistors. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
