| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method and an apparatus for manufacturing a silicon single crystal capable of manufacturing the single crystal in deleting unevenness caused by properties of the apparatus and suppressing fluctuations of the diameter and the oxygen concentration. <P>SOLUTION: In the method for manufacturing a single crystal by a horizontal magnetic field applied CZ (Czochralski) method in which a single crystal is pulled up in applying a horizontal magnetic field by a magnetic field applying equipment to a silicon precursor melt held in a quartz crucible, the central position of a magnetic field generated by the magnetic field applying equipment is measured, and the measured central position of the magnetic field and the pulling up axis which becomes the rotating axis of the single crystal are horizontally shifted in the range of 2-14 mm before the single crystal production and/or during the single crystal production. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
