| 摘要 |
PROBLEM TO BE SOLVED: To reduce etching failure of a ferroelectric material, caused by the dust on a hard mask. SOLUTION: After stacking an electrode film 23, a ferroelectric film 24, and an electrode film 25 sequentially on a semiconductor substrate 11, a hard mask HM is stacked. Then, by using a surfactant, the surface of the hard mask HM is scrub-cleaned, and thereafter, the hard mask HM is patterned in compliance with the planar shape of a ferroelectric capacitor 26. By anisotropically etching the electrode film 25, the ferroelectric film 24, and the electrode film 23 and sequentially using the patterned hard mask HM, a top electrode 25a, a ferroelectric layer 24a, and the bottom electrode 23a of the ferroelectric capacitor 26 are formed on the semiconductor substrate 11. COPYRIGHT: (C)2010,JPO&INPIT
|
