SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device having N-type and P-type transistors having appropriate high operation voltages and N-type and P-type transistors having appropriate low operation voltages, and to provide a manufacturing method of the semiconductor device. SOLUTION: The semiconductor device 1 is provided with an HVN transistor 10 formed on a semiconductor substrate 2, an HVP transistor 20, an LVN transistor 30, an LVP transistor 40 and a resistance element 50. The LVN transistor 30 has a gate insulating film 31 composed of an insulator layer 31a, a La2O3layer 31b and a high dielectric ratio insulator layer 31c, and with a gate electrode 32 formed of a metal layer 32a and a semiconductor layer 32b. The LVP transistor 40 has a gate insulating film 41 consisting of an insulator layer 41a, an Al2O3layer 41b and a high dielectric ratio insulator layer 41c, and a gate electrode 42 composed of a metal layer 42a and a semiconductor layer 42b. The resistance element 50 has a first layer 51 composed of an insulator material and a second layer 52 composed of a semiconductor material. COPYRIGHT: (C)2010,JPO&INPIT