| 摘要 |
For achieving an enhanced combination of a low on-resistance at a high break-through voltage a lateral high-voltage MOS transistor comprises a plurality of doped RESURF regions of the first conductivity type within the drift region, wherein the doped RESURF regions are separated from each other by drift region sections in a first lateral direction (y), which is parallel to a substrate surface and is orthogonal to a connecting line from the source region to the drain region, and also in a depth direction, which is orthogonal to the substrate surface, such that in each of said two directions an alternating arrangement of regions of the first and second conductivity types is provided.
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