| 摘要 |
A semiconductor device is disclosed. In one embodiment, the semiconductor device includes a memory cell, which in turn includes an electrode and a phase change material. The electrode may be disposed on a substrate and include a sublithographic lateral dimension parallel to the substrate. The phase change material may be coupled to the electrode and include a lateral dimension parallel to the substrate and greater than the sublithographic lateral dimension of the electrode. Various semiconductor devices and manufacturing methods are also provided.
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