| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an electrolytic CMP method excellent in the polish rate and a polishing pad used for the method. <P>SOLUTION: The polishing pad is used for an electrolytic chemical mechanical polishing method that presses a polishing pad to a wafer, whose front surface is covered with a metal film while supplying an electrolytic solution, and voltage is applied between the wafer and the polishing pad whereby it polishes the wafer while electrolyzing the metal film, wherein a polishing pad is used that has an ultra-fine fiber entangled object containing an ultra-fine fiber with an average fineness range of 0.01-0.8 dtex united with a polymer elastic body, a bend elastic constant range of 150 to 650 MPa, a voidage range of 25-65 vol.%, and continuous holes. <P>COPYRIGHT: (C)2010,JPO&INPIT |
