| 摘要 |
PROBLEM TO BE SOLVED: To provide a dielectric isolation type semiconductor device, which prevents degradation in the device characteristics caused by a leakage current, with high product yield in a power semiconductor device using an SOI substrate. SOLUTION: In the dielectric isolation type semiconductor device which uses an SOI substrate and is sectioned and isolated by an intermediate insulating film in the SOI substrate and a trench of closed loop, inner wall of the trench consists of the trench sidewall of a sidewall insulating film and the trench bottom of the intermediate insulating film which are holding the trench in-between without touch each other, the trench sidewall has a sidewall flat surface and a sidewall curved surface, the sidewall flat surface is connected with the trench bottom through the sidewall curved surface, the sidewall curved surface is convex toward the interior of the trench and the curvature radius of the curved surface is 0.2-10μm. COPYRIGHT: (C)2010,JPO&INPIT
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