| 摘要 |
Affords GaN epitaxial wafers designed to improve production yields, as well as semiconductor devices utilizing such GaN epitaxial wafers, and methods of manufacturing such GaN epitaxial wafers and semiconductor devices. A GaN epitaxial wafer manufacturing method involving the present invention includes a first GaN layer formation step of epitaxially growing a first GaN layer onto a substrate, a pit formation step, following the first GaN layer formation step, of forming pits in the front side of the substrate, and a second GaN layer formation step, following the pit-formation step, of epitaxially growing a second GaN layer onto the first GaN layer, and therefore controls cracking to a minimum and improves production yields.
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