BIPOLAR TRANSISTOR HAVING SELF-ADJUSTED EMITTER CONTACT

摘要

The invention relates to a semiconductor device comprising a substrate layer made from a semiconductor material of a first conductivity type having a first isolation region and a vertical bipolar transistor having a first height section of a collector made from monocrystalline semiconductor material of a second conductivity type, arranged in an opening of the first isolation region, a second isolation region that lies partially on the first height section of the collector and partially on the first isolation region and has an opening in the region of the collector in which a second height section of the collector made from monocrystalline material is arranged, comprising an inner region of the second conductivity type, a base made from monocrystalline semiconductor material of the first conductivity type, a base connection region that is surrounded by the base in the lateral direction, a T-shaped emitter made from semiconductor material of the second conductive type that overlaps the base connection region, wherein the base connection region is made of a semiconductor material that is different from the semiconductor material of the collector, the base and the emitter in its chemical composition, except for a seeding layer bordering the substrate or a metallization layer bordering contact with the base, and has greater mobility of majority load carriers of the first conductivity type in comparison thereto.