In chemical vapor deposition apparatus, a wafer carrier (32) has a top surface (34) holding the wafers and a bottom surface (36) heated by radiant heat transfer from a heating element (28). The bottom surface (36) of the wafer carrier is non-planar due to features such as depressions (54) so that the wafer carrier has different thickness at different locations. The thicker portions of the wafer carrier have higher thermal resistance. Differences in thermal resistance at different locations counteract undesired non-uniformities in heat transfer to the wafer. The wafer carrier may have pockets with projections (553, 853) for engaging spaced-apart locations on the edges of the wafer.
申请公布号
WO2010024943(A3)
申请公布日期
2010.06.17
申请号
WO2009US04931
申请日期
2009.08.28
申请人
VEECO INSTRUMENTS INC.;VOLF, BORIS;SODERMAN, BREID;ARMOUR, ERIC, A.