METHOD FOR PRODUCING A DOPANT PROFILE

摘要

The invention relates to a method for producing a dopant profile, which is based on a surface of a wafer-like semiconductor component, by introducing dopant atoms into the semiconductor component. In order to be able to manufacture semiconductor components with a desired dopant depth profile inexpensively, it is proposed that a dopant-containing layer be produced on or in a region of the surface first of all in order to produce a provisional first dopant profile and then a plurality of semiconductor components which have a corresponding layer be subjected to heat treatment on top of one another in the form of a stack in order to produce a second dopant profile which has a greater depth in comparison with the first dopant profile.