METHOD AND CIRCUIT FOR PREVENTING HIGH VOLTAGE MEMORY DISTURB

摘要

A circuit and method reduces disturb in a memory array resulting from one of two supply voltages dropping below a predetermined value. Memory control logic is operated using a logic power domain. Higher voltages than that of the logic power domain are generated in response to an oscillator oscillating. The higher voltages are used to operate the memory array. Operation of the oscillator is controlled with the memory control logic when the logic power domain is at least at a first level or value. The oscillator is disabled when the logic power domain is below the first level. The disabling of the oscillator has the effect of preventing generation of the higher voltages. This facilitates preventing the higher voltages from reaching the memory array when they may not be properly controlled.