| 发明名称 |
Gate depletion drain extended MOS translator |
| 摘要 |
<p>A drain extended MOS transistor configured to operate in a gate-depletion regime. Devices comprising such transistors are described together with fabrication processes for such devices and transistors.</p> |
| 申请公布号 |
GB201007220(D0) |
申请公布日期 |
2010.06.16 |
| 申请号 |
GB20100007220 |
申请日期 |
2010.04.30 |
| 申请人 |
CAMBRIDGE SILICON RADIO LTD |
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