| 摘要 |
PROBLEM TO BE SOLVED: To provide a trimming amount control technology for realizing a method of detecting a trimming end point where the trimming amount of each pattern is within a specified value, by establishing a method for monitoring trimming amount of each of sparse pattern and dense pattern during trimming. SOLUTION: In a plasma etching process device 13, a wafer housed in a vacuum process chamber is subjected to a resist trimming process. It comprises an OES19 that monitors state of the device in plasma processing. Based on a feature amount 16 which is based on the monitoring output from the OES19 and a trimming time 15, a trimming amount prediction value 18 for each sparse/dense pattern is predicted using a trimming amount prediction regression model 17 for each preset sparse/dense pattern. The time point at which the distance from the trimming amount prediction value 18 and a target trimming amount 110 is equal is taken as an end point of trimming process for controlling the plasma etching device 13. COPYRIGHT: (C)2006,JPO&NCIPI |
