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发明名称
Non-volatile memory device having dual gate structure and method of forming the same
摘要
申请公布号
KR100963165(B1)
申请公布日期
2010.06.16
申请号
KR20030042172
申请日期
2003.06.26
申请人
发明人
分类号
H01L27/115
主分类号
H01L27/115
代理机构
代理人
主权项
地址
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