Method for manufacturing a power semiconductor device

摘要

For manufacturing a power semiconductor device a first oxide layer (22) is produced on a first main side of a substrate (1) of a first conductivity type. Afterwards a structured gate electrode layer (3, 3') with at least one opening (31) is produced on the first main side on top of the first oxide layer (22). First dopants of the first conductivity type are implanted into the substrate (1) on the first main side using the structured gate electrode layer (3, 3') as a mask, and the first dopants are diffused into the substrate (1). Afterwards second dopants of a second conductivity type are implanted into the substrate (1) on the first main side and the second dopants are diffused into the substrate (1). After diffusing the first dopants into the substrate (1) and before implanting the second dopants into the substrate (1) the first oxide layer (22) is partially removed. The structured gate electrode layer (3, 3') is used as a mask for implanting the second dopants.