发明名称 |
DEPOSITION AND SUBSTRATE ETCHING APPARATUS AND METHOD USING POWDER |
摘要 |
PURPOSE: A deposition and a substrate etching apparatus and a method using powder are provided to perform deposition and etching of a substrate by enabling a metal power to collide a substrate to the substrate through a high pressure transfer gas. CONSTITUTION: A vacuum pump(20) makes the inside of a chamber(10) vacuum. A filter(80) collects a particle which passes through a deposition and etching process. A substrate support unit(30) supports a substrate. An injection nozzle(40) sprays a predetermined volume of powder on the substrate. The gas inlet(50) receives predetermined gas and a powder supply unit supplies the powder to a gas pipe.
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申请公布号 |
KR100964062(B1) |
申请公布日期 |
2010.06.16 |
申请号 |
KR20090083175 |
申请日期 |
2009.09.03 |
申请人 |
SNU R&DB FOUNDATION |
发明人 |
AHN, SUNG HOON;CHUN, DOO MAN;KIM, MIN SAENG;YEO, JUN CHEOL |
分类号 |
H01L21/20;H01L21/302 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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