| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a high-purity copper alloy ball bonding wire which has high recrystallization temperature, is easily die drawn at room temperature, has small initial ball hardness, and causes no IC chip cracking. <P>SOLUTION: The high-purity copper alloy ball bonding wire has a recrystallization temperature higher than that of high-purity copper of ≥99.9999 mass% in purity and has reduced initial ball hardness of ball bonding by adding a fine amount of phosphorus (P) to high-purity copper of ≥99.9999 mass% in purity. The characteristics are obtained by adding 0.5 to 15 mass ppm of phosphorus (P) to the high-purity copper of ≥99.9999 mass% in purity and further making the total amount of other contained impurities smaller than the content of phosphorus (P). <P>COPYRIGHT: (C)2010,JPO&INPIT |
