发明名称 |
METHOD OF MAKING A SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE MADE THEREBY |
摘要 |
<p>A semiconductor device comprises a semiconductor substrate (110) having a patterned interconnect layer (120) formed thereon. A first capacitor (210), a second capacitor (220), and a resistor (230) are formed over the interconnect layer. The first capacitor comprises a layer of electrode material and a first number of dielectric layers. The second capacitor comprises the layer of electrode material and a second number of dielectric layers. The first number of dielectric layers is greater than he second number of dielectric layers such that the first capacitor has a higher capacitance per unit area than does the second capacitor.</p> |
申请公布号 |
EP1723673(A4) |
申请公布日期 |
2010.06.16 |
申请号 |
EP20050713151 |
申请日期 |
2005.02.10 |
申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
REMMEL, THOMAS P.;KALPAT, SRIRAM;MILLER, MELVY F.;ZURCHER, PETER |
分类号 |
H01L21/02;H01L21/20;H01L21/8242;H01L23/522;H01L27/06;H01L27/108;H01L29/00;H01L29/76;H01L29/94;H01L31/119 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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