发明名称 Semiconductor structure comprising an electrically conductive feature and method of forming a semiconductor structure
摘要 <p>A semiconductor structure (300) comprises a semiconductor substrate (301). A layer of an electrically insulating material (304) is formed over the semiconductor substrate (301). An electrically conductive feature (312) is formed in the layer of electrically insulating material (304). A first layer of a semiconductor material (320) is formed between the electrically conductive feature (312) and the layer of electrically insulating material (304).</p>
申请公布号 GB2466163(A) 申请公布日期 2010.06.16
申请号 GB20100006169 申请日期 2008.09.29
申请人 GLOBAL FOUNDRIES, INC 发明人 FRANK FEUSTEL;TOBIAS LETZ;CARSTEN PETERS
分类号 H01L21/768;H01L23/532 主分类号 H01L21/768
代理机构 代理人
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