发明名称 |
Semiconductor structure comprising an electrically conductive feature and method of forming a semiconductor structure |
摘要 |
<p>A semiconductor structure (300) comprises a semiconductor substrate (301). A layer of an electrically insulating material (304) is formed over the semiconductor substrate (301). An electrically conductive feature (312) is formed in the layer of electrically insulating material (304). A first layer of a semiconductor material (320) is formed between the electrically conductive feature (312) and the layer of electrically insulating material (304).</p> |
申请公布号 |
GB2466163(A) |
申请公布日期 |
2010.06.16 |
申请号 |
GB20100006169 |
申请日期 |
2008.09.29 |
申请人 |
GLOBAL FOUNDRIES, INC |
发明人 |
FRANK FEUSTEL;TOBIAS LETZ;CARSTEN PETERS |
分类号 |
H01L21/768;H01L23/532 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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