| 摘要 |
In a solid state image pickup device, in order to form a bypass region (106) with precisely controlled impurity concentration and width, there is provided a solid state image pickup device comprising a photoelectric conversion unit (102,104,105) composed of a first region (102) of a first conductive type formed on a semiconductor substrate (101) and having a principal surface, a second region (104) of a second conductive type formed in the first region, and a third region (105) of the first conductive type present between the second region (104) and the principal surface, a fourth region (107) of the second conductive type formed in the first region (102), and a charge transfer unit including the first region (102), an insulation layer on the first region and a control electrode (103) provided on the insulation layer, for transferring a signal charge accumulated in the photoelectric conversion unit (102,104,105), to the fourth region (107), wherein the photoelectric conversion unit (102,104,105) and the charge transfer unit are connected through a fifth region (106) of the second conductive type. |
