| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma etching system treating the flexible object with high productivity and high working precision. SOLUTION: This system has a gas feeding part feeding a gaseous starting material for exciting plasma and executing etching treatment into a vessel and an exhausting part exhausting the air and reducing the pressure in the vessel, the inside of the vessel is provided with a first electrode for allowing the object to be treated go along in a contacted state at the time of treatment and a second electrode connected to a power source feeding electric power with a prescribed frequency for exciting plasma via a capacitor which have been oppositely ground, the face on the side of the object to be treated is provided with a shield of an insulator provided with an opening part having an area smaller than those of the first and second electrodes for executing etching, also surrounding the second electrode and surrounding the plasma region so as to almost limit the same therein, and, in the case of etching treatment, plasma is applied from the opening part of the shield of an insulator in a stage in which the object to be treated is allowed to go along the face on the second electrode side of the first electrode in a contacted state. |
